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On-Region Characteristics.
VGS= 10V 6.0V 4.5V
On-Resistance Variation with Drain Current and Gate Voltage.
RDS(ON), Noemalized Drain-source on-resistance
2 1.8 1.6 1.4
5.0V VGS= 4.0V 4.5V
10
ID, Drain-source current(A)
8
4.0V
6
4
3.5V
1.2 1 0.8
6.0V 7.0V 10V
2
3.0V
0
0
1
2
3
4
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
RDS(ON), On-resistance(OHM)
RDS(ON), Normalized Drain-source on-resistance
1.6
ID= 3.5A VGS= 10V
0.275 ID=2A
1.4
0.225
1.2
0.175
1 0.8
0.125
TA= 125C TA= 25C
0.075
0.6 -50
0.025
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, Junction Temperature(C)
VGS, Gate to Source Voltage(V)
Transfer Characteristics.
Is, Reverse Drain Current (A)
10
VDS= 5V TA= -55C 125C
Body Diode Forword Voltage Variation with Source Current and Temperature.
10
VGS= 0V
8
1
TA= 125C 25C -55C
ID, Drain Current(A)
25C
6
0.1
4
0.01
2
0.001
0
1
2
3
4
5
6
0.0001 0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, Gate to Source Voltage(V)
VSD, Body Diode Forword Voltage(V)
Gate-Charge Characteristics
10
ID = 3.5A VDS= 5V 15V
Capacitance Characteristics
400
Capacitance(pF)
8
10V
300
Ciss
200
VGS (Voltage)
6
4
100
Coss Crss
0 5 10 15 20 25 30
2
0
0 0 1 2 3 4 5 6 7
Qg (nC)
VDS,Drain to Source Voltage(V)
Maximum Safe Operating Area.
30
Single Pulse Maximum Power Dissipation.
5
10
100 us
S (O RD T IMI N)L
4
ID, Drain Current(A)
3 1 0.3 0.1 0.03
1m s 10m s 100 ms
Power(W)
30 50
3
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 0.3 1 3
1s DC
2
1
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 1 10 100 300
0.01
10
0 0.01
VDS, Drain-Source Voltage(V)
Single pulse time(SEC)
On-Region Characteristics
RDS(ON),Normalized Drain-Source On-Resistance
10
On-Resistance Variation with Drain Current and Gate Voltage.
3
VGS= -10V
ID,Drain Current(A)
8
- 6.0V
VGS=-3.5V
- 4.5V - 4.0V - 3.5V
2.5
6
2
- 4.0V - 4.5V - 5.0V - 6.0V -10.0V
4
1.5
2
1
0 0 1 2 3 4 5
0.5 0 2 4 6 8 10
- VDS,Drain-Source Voltage(V)
- ID,Drain Current(A)
On-Resistance Variation with Temperature
1.6
On-Resistance Variation with Gate-to-Source Voltage.
0.4
RDS(ON),Normalized Drain-Source On-Resistance
1.4
RDS(ON),On-Resistance(OHM)
ID= -2.3A VGS= -10V
ID = -1.5A
0.3
1.2
TA=125C
0.2
1
0.8
0.1
TA=25C
0.6 -50 -25 0 25 50 75 100 125 150
0 2 4 5 6 10
TJ,Junction Temperature(C)
- VGS,Gate To Source Voltage(V)
Transfer Characteristics
5
10
Body Diode Forward Voltage Variation With Source Current and Temperature.
-IS,Reverse Drain Current(A)
VDS= - 5V
-ID,Drain Current(A)
4
TA= - 55C
125C
25C
1
VGS=0V TA=125C
3 2 1
0.1 25C 0.01 - 55C 0.001
0 1.5
0.0001
2.5
3.5
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS,Gate To Source Voltage(V)
-VSD,Body Diode Forward Voltage(V)
Gate-Charge Characteristics
10
ID = -2.0A VDS= -5V -10V
Capacitance Characteristics
400
Capacitance(pF)
8
300
VGS (Voltage)
6
-15V
200
Ciss
4
100
2
Coss
0
0 0 1 2 3 4 5 6
Crss
0 5 10 15 20 25 30
Qg (nC)
VDS,Drain to Source Voltage(V)
Maximum Safe Operating Area.
30
Single Pulse Maximum Power Dissipation.
5
10
100 us
S (O RD T IMI N)L
4
ID, Drain Current(A)
3 1 0.3 0.1 0.03
1m s 10m s 100 ms
Power(W)
30 50
3
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 0.3 1 3
1s DC
2
1
VGS= 10V SINGLE PULSE R JA=150 C/W TA=25C
0.1 1 10 100 300
0.01
10
0 0.01
VDS, Drain-Source Voltage(V)
Single pulse time(SEC)
Transient Thermal Response Curve.
r(t), Normalized Effective Transient Thermal Resistance
1 D=0.5
0.5
0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse
P(pk)
t1 t2
0.02
R JA(t) = r(t) * R R JA=150 C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2
0.001 0.01 0.1 1 10 100 300
0.01 0.0001
t1 Time(Sec)

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